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  inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 25N40 features drain current i d = 25a@ t c =25 drain source voltage : v dss = 400v(min) static drain-source on-resistance : r ds(on) = 0.2 (max) fast switching applications switch mode power supply. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 400 v v gs gate-source voltage-continuous 30 v i d drain current-continuous 25 a p d total dissipation @t c =25 278 w t j max. operating junction temperature 150 t stg storage temperature -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 25N40 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =250 a 400 v v gs (th ) gate threshold voltage v ds = v ge ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s = 25a ;v gs = 0 1.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 12.5a 0.2 i gss gate-body leakage current v gs = 30v;v ds = 0 10 na i dss zero gate voltage drain current v ds =400v; v gs = 0 1 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 2400 pf c rss reverse transfer capacitance 30 c oss output capacitance 390 t r rise time v gs =10v; i d =26a; v dd =200v; r g =25 100 ns t d(on) turn-on delay time 45 t f fall time 66 t d(off) turn-off delay time 115 pdf pdffactory pro www.fineprint.cn


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